| PART |
Description |
Maker |
| PS21962-ST |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-T09 PS21962-AT PS21962-CT PS21962-T PS2196 |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-ST09 PS21962-ST |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
| PS21964-AT PS21964-CT PS21964-T PS21964-TW |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-ST |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
| PS21963-AT PS21963-CT PS21963-T PS21963-TW |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PS21962-4S PS21962-4S09 |
Dual-In-Line Package Intelligent Power Module
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21965-4S |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| APT60M75L2LL |
POWER MOS 7 600V 73A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| IRGSL4B60KD1 IRGS4B60KD1 IRGB4B60KD1 |
600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package
600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
